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| DTA113T_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – PNP DIGITAL TRANSISTOR | |||
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DTA113T
PNP SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TA=25ï°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA=25ï°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
DC Current Gain
Input Resistance
Current Gain Bandwidth Product
SYMBOL
TEST CONDITIONS
BVCEO IC=-100μA, RBE=â
VCE(SAT) IC=-10mA, IB=-0.5mA
ICBO VCB=-50V, IE=0
hFE VCE=-5V, IC=-1mA
RIN
fT
VCE=-6V, IE=10mA
MIN TYP MAX UNIT
-50
V
-0.3 V
-0.1 μA
100
0.7 1.0 1.3 kâ¦
150
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-091.D
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