BYC8-600 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Rectifier diode ultrafast, low switching loss

BYC8-600
Preliminary
DIODE
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Peak Repetitive Reverse Voltage
V_RRM
600
V
Crest Working Reverse Voltage
V_RWM
600
V
square-wave pulse;δ =0.5;
Average Forward Current
T_Tab ≤109°C
I_F(AV)
8
A
square-wave pulse; δ =0.5;
Repetitive Peak Forward Current
t_P = 25µs, T_Tab ≤109°C
I_FRM
16
A
t_P=8.3ms,sine-wave
60
A
Non-Repetitive Peak Forward Current. ^{pulse;TJ =150°C}
t_P=10ms,sine-wave
I_FSM
55
A
pulse;T_J =150°C
Operating Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
Junction to Tab
θ_JA
60
θ_JB
2.2
„ ELECTRICAL CHARACTERISTICS (T_J =25°C, unless otherwise specified)
UNIT
K/W
K/W
PARAMETER
Forward Voltage
Reverse Current
Recovered Charge
Reverse Recovery Time
Peak Reverse Recovery Current
Forward Recovery Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
I_F =8A, T_J =25°C
V_F I_F =8A, T_J =150°C
2 2.9 V
1.4 1.85 V
I_F =16A, T_J =150°C
1.7 2.3 V
I_R
V_R=600V
V_R=500V, T_J=100°C
9 150 µA
1.1 3 mA
Q_R I_F =1A, dI_F/dt=100A/μs, T_J =25°C
12
nC
I_F =1A, V_R=30V, dI_F/dt=50A/μs, T_J =25°C
t_RR I_F=8A,V_R=400V, T_J=100°C
dI_F/dt=500A/μs T_J=25°C (See Figure1)
30 52 ns
32 40 ns
19
ns
I_RM
I_F=8A,V_R=400V, dI_F/dt=50A/μs, T_J=125°C
I_F=8A,V_R=400V, dI_F/dt=500A/μs, T_J=100°C
1.5 5.5 A
9.5 12 A
V_FR I_F =10A, dI_F/dt=100A/μs(See Figure2)
8 10 V
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QW-R601-025.b