BYC15-600 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Rectifier diode, hyperfast

BYC15-600
Preliminary
DIODE
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Peak Repetitive Reverse Voltage
V_RRM
600
V
Crest Working Reverse Voltage
V_RWM
600
V
Reverse Voltage
square-wave pulse;δ =1.0;
T_Tab ≤100°C
V_R
500
V
Average Forward Current
square-wave pulse;δ =0.5;
T_Tab ≤98°C
I_F(AV)
15
A
Repetitive Peak Forward square-wave pulse; δ =0.5;
Current
t_P = 25µs, T_Tab ≤98°C
I_FRM
30
A
Non-Repetitive Peak
Forward Current.
t_P=10ms,sine-wave pulse;
t_P=8.3ms,sine-wave pulse;
I_FSM
200
A
220
A
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
Junction to Tab
θ_JA
60
θ_JB
1.5
„ ELECTRICAL CHARACTERISTICS (T_J =25°C, unless otherwise specified)
UNIT
K/W
K/W
PARAMETER
Forward Voltage
Reverse Current
Reverse Recovery Time
Peak Reverse Recovery Current
Forward Recovery Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
I_F =15A, T_J =150°C
V_F I_F =30A, T_J =150°C
1.32 2.03 V
1.64 2.34 V
I_F =15A
1.89 2.9 V
I_R
V_R=600V
V_R=500V, T_J=100°C
12 200 µA
1.1 3.0 mA
I_F =1A, V_R=30V, dI_F/dt=50A/μs (Figure1)
35 55 ns
t_RR I_F=15A,V_R=400V,I_F/dt=500A/μs T_J=25°C
(Figure1)
T_J=100°C
19
ns
32 40 ns
I_RM
I_F=15A,V_R=400V, T_J=125°C dI_F/dt=50A/μs
(Figure1)
dI_F/dt=500A/μs
3.0 7.5 A
9.5 12 A
V_FR I_F =15A, dI_F/dt=100A/μs (Figure2)
8 11 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-026.b