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| BYC10-600_15 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Hyperfast power diode | |||
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BYC10
Preliminary
DIODE
ï® ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Peak Repetitive Reverse Voltage
VRRM
600
V
Crest Working Reverse Voltage
VRWM
600
V
Continuous Reverse Voltage TTab ⤠114°C
VR
500
V
Average Forward Current
δ =0.5; with reapplied VRRM(max);
TTab â¤78°C
IF(AV)
10
A
Repetitive Peak Forward
Current
δ =0.5; with reapplied VRRM(max);
TTab â¤78°C
IFRM
20
A
t = 10ms
IFSM
65
A
Non-Repetitive Peak
t = 8.3ms
Forward Current.
sinusoidal; TJ =150°C prior to
71
A
surge with reapplied VRWM(max)
Operating Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Tab
TO-220/TO-220-2
TO-220F
SYMBOL
θJA
θJB
RATINGS
60
2
5
ï® ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
K/W
K/W
K/W
PARAMETER
Forward Voltage
Reverse Current
Reverse Recovery Time
Peak Reverse Recovery Current
Forward Recovery Voltage
SYMBOL
TEST CONDITIONS
MIN
IF =10A, TJ =150°C
VF IF =20A, TJ =150°C
IF =10A
IR
VR=600V
VR=500V, TJ=100°C
IF =1A, VR=30V, dIF/dt=50A/μs
tRR
IF=10A, VR=400V, dIF/dt=500A/μs TJ=100°C
IRRM
IF=10A,VR=400V, dIF/dt=100A/μs, TJ=125°C
IF=10A,VR=400V, dIF/dt=500A/μs, TJ=125°C
VFR IF =10A, dIF/dt=100A/μs
TYP MAX UNIT
1.4 1.8 V
1.7 2.3 V
2.0 2.9 V
9 200 µA
1.1 3.0 mA
35 55 ns
19
ns
32 40 ns
3 7.5 A
9.5 12 A
8 11 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-023.c
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