|
BYC10-600 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Rectifier diode ultrafast, low switching loss | |||
|
◁ |
BYC10-600
Preliminary
DIODE
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Peak Repetitive Reverse Voltage
VRRM
600
V
Crest Working Reverse Voltage
VRWM
600
V
Continuous Reverse Voltage TTab ⤠114°C
VR
500
V
Average Forward Current
δ =0.5; with reapplied VRRM(max);
TTab â¤78°C
IF(AV)
10
A
Repetitive Peak Forward
Current
δ =0.5; with reapplied VRRM(max);
TTab â¤78°C
IFRM
20
A
t = 10ms
IFSM
65
A
Non-Repetitive Peak
t = 8.3ms
Forward Current.
sinusoidal; TJ =150°C prior to
71
A
surge with reapplied VRWM(max)
Operating Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Tab
SYMBOL
θJA
θJB
RATINGS
60
2
 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
K/W
K/W
PARAMETER
Forward Voltage
Reverse Current
Reverse Recovery Time
Peak Reverse Recovery Current
Forward Recovery Voltage
SYMBOL
TEST CONDITIONS
MIN
IF =10A, TJ =150°C
VF IF =20A, TJ =150°C
IF =10A
IR
VR=600V
VR=500V, TJ=100°C
IF =1A, VR=30V, dIF/dt=50A/μs
tRR
IF=10A, VR=400V, dIF/dt=500A/μs TJ=100°C
IRRM
IF=10A,VR=400V, dIF/dt=100A/μs, TJ=125°C
IF=10A,VR=400V, dIF/dt=500A/μs, TJ=125°C
VFR IF =10A, dIF/dt=100A/μs
TYP
1.4
1.7
2.0
9
1.1
35
19
32
3
9.5
8
MAX UNIT
1.8 V
2.3 V
2.9 V
200 µA
3.0 mA
55 ns
ns
40 ns
7.5 A
12 A
11 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-023.b
|
▷ |