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BU941_15 Datasheet, PDF (2/5 Pages) Unisonic Technologies – NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER
BU941
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCES
500
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
400
V
VEBO
5
V
Collector Current
Collector Peak Current
IC
15
A
ICM
30
A
Base Current
Base Peak Current
IB
1
A
IBM
5
W
TO-3P
155
W
Total Power Dissipation (Tc=25C) TO-220
PD
150
W
TO-263
65
W
Junction Temperature
TJ
+175
C
Storage Temperature
TSTG
-65 ~ +175
C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Sustaining
Voltage
VCEO(SUS)*
IC=1mA, VCLAMP=400V, L=10mH
(see Fig. 1)
Collector Cut-Off Current
Collector Cut-Off Current
ICES
VCE=500V, VBE=0
VCE=500V, VBE=0, TJ=125C
ICEO
VCE=450V, IB=0
VCE=450V, IB=0, TJ=125C
Emitter Cut-off Current
Collector-Emitter Saturation
Voltage
IEBO
VCE(SAT)*
VEB=5V, IC=0
IC=8A, IB=100mA
IC=10A, IB=250mA
IC=12A, IB=300mA
Base-Emitter Saturation Voltage
DC Current Gain
VBE(SAT)*
hFE*
IC=8A, IB=100mA
IC=10A, IB=250mA
IC=12A, IB=300mA
VCE=10V, IC=5A
Diode Forward Voltage
Functional Test
VF
IF=10A
VCC=24V, VCLAMP=400V, L=7mH
(see Functional Test Circuit)
Fall Time
Storage Time
tF
VCC=12V, VCLAMP=300V, VBE=0,
RBE=47Ω, L=7mH, IC=7A, IB=70mA
tS
(see Fig.2)
* Pulsed: Pulse duration=300μs, duty cycle 1.5%
MIN TYP
400
300
10
MAX
100
0.5
100
0.5
20
1.6
1.8
2
2.2
2.5
2.7
UNIT
V
μA
mA
μA
mA
mA
V
V
2.5
V
A
0.5
μs
15
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R203-025.D