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| BU941Z Datasheet, PDF (2/5 Pages) STMicroelectronics – HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON | |||
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BU941Z
NPN SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
350
V
VEBO
5
V
Collector Current
Collector Peak Current
IC
15
A
ICM
30
A
Base Current
Base Peak Current
IB
1
A
IBM
5
W
Total Power Dissipation (TC=25ï°C)
TO-3P
TO-220
PD
155
W
150
W
Junction Temperature
Storage Temperature
TJ
TSTG
+175
ï°C
-65 ~ +175
ï°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (Tc=25ï°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Clamping Voltage
VCL* IC=100mA
Collector Cut-Off Current
ICEO
VCE=300V
VCE=300V, TJ=125ï°C
Emitter Cut-off Current
Collector-Emitter Saturation
Voltage
IEBO
VCE(SAT)*
VEB=5V, Ic=0
IC=8A, IB=100mA
IC=10A, IB=250mA
IC=12A, IB=300mA
Base-Emitter Saturation Voltage
IC=8A, IB=100mA
VBE(SAT)* IC=10A, IB=250mA
DC Current Gain
IC=12A, IB=300mA
hFE* VCE=10V, Ic=5A
Diode Forward Voltage
Functional Test
VF
IF=10A
VCC=24V, Vclamp=400V, L=7mH
(see Functional Test Circuit)
Fall Time
Storage Time
tF
VCC=12V, Vclamp=300V, VBE=0,
ts
RBE=47â¦, L=7mH, Ic=7A, IB=70mA
(see Fig.1)
*Pulsed: Pulse duration=300μs, duty cycle 1.5%
MIN TYP
350
300
10
15
0.5
MAX
500
100
0.5
20
1.6
1.8
2
2.2
2.5
2.7
UNIT
V
μA
mA
mA
V
V
2.5
V
A
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R214-022.B
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