BU941 Datasheet, PDF (2/4 Pages) STMicroelectronics – HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

UTC BU941
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage
Ic=100mA, Vclamp=400V, L=10mH 400
VCEO(sus)* _{(see fig. 1)}
Collector Cut-off Current
ICES
VCE=500V, VBE=0
VCE=500V, VBE=0, Tj=125°C
Collector Cut-off Current
ICEO
VCE=450V, IB=0
VCE=450V, IB=0, Tj=125°C
V
100 μA
0.5 mA
100 μA
0.5 mA
Emitter Cut-off Current
IEBO VEB=5V, Ic=0
20 mA
Collector-Emitter Saturation Voltage
IC=8A, IB=100mA
1.6 V
VCE(sat)* IC=10A, IB=250mA
1.8
IC=12A, IB=300mA
2
Base-Emitter Saturation Voltage
IC=8A, IB=100mA
2.2
VBE(sat)* IC=10A, IB=250mA
2.5 V
IC=12A, IB=300mA
2.7
DC Current Gain
HFE* VCE=10V, Ic=5A,
300
Diode Forward Voltage
VF
IF=10A
2.5 V
Functional Test
Vcc=24V, Vclamp=400V, L=7mH
10
(see Functional Test Circuit)
A
Fall Time
tf
Vcc=12V, Vclamp=300V, VBE=0,
15
Storage Time
RBE=47Ω, L=7mH, Ic=7A, IB=70mA
ts
(see fig.2)
0.5
μs
*Pulsed: Pulse duration=300μs, duty cycle 1.5%
Vcc=16V
0V
t1
20ms
B
C
T.U.T.
R1
R2
E
Vclamp
VD
12V
7mH
Vin
47Ω
T.U.T.
Vclamp
Fig. 1 Sustaining Voltage Test Circuit
Fig. 2 Switching Time Test Circuit
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