BU931_13 Datasheet, PDF (2/5 Pages) Unisonic Technologies – NPN POWER DARLINGTON

BU931
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (V_BE=0)
V_CES
500
V
Collector-Emitter Voltage (I_B=0)
V_CEO
400
V
Emitter-Base Voltage (I_C=0)
V_EBO
5
V
Collector Current
I_C
15
A
Collector Peak Current
I_CM
30
A
Base Current
I_B
1
A
Base Peak Current
I_BM
5
A
Power Dissipation (T_C=25°C)
TO-3P
TO-263
P_D
135
125
W
W
Junction Temperature
T_J
+200
°C
Storage Temperature
T_STG
-65 ~ +200
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Case
TO-3P
TO-263
SYMBOL
θ_JC
„ ELECTRICAL CHARACTERISTICS
RATING
1.1
1.2
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cut-off Current (I_B=0)
I_CEO
V_CE = 450 V
V_CE =450V, T_J =125°C
Emitter Cut-off Current (I_C=0)
I_EBO V_EB = 5V
I_C = 7A, I_B =70mA
Collector-Emitter Saturation Voltage (Note)
V_CE(SAT) ^IC ^{= 8A, I}B ^=100mA
I_C = 10A, I_B =250mA
I_C = 7A, I_B =70mA
Base-Emitter Saturation Voltage (Note)
V_BE(SAT) IC = 8A, IB =100mA
I_C = 10A, I_B =250mA
DC Current Gain
h_FE I_C = 5A, V_CE =10V
Diode Forward Voltage
V_F
I_F = 10 A
Functional Test
V_CC =24V, V_clamp =400V
L=7mH
Inductive Load Storage Time / Fall Time
t_S
t_F
Note: Pulsed: Pulse duration = 300μs, duty cycle 1.5 %
V_CC = 12V, V_clamp =300V
L=7mH
I_C =7A, I_B =70mA
V_BE =0, R_BE =47Ω
MIN TYP MAX UNIT
100 μA
0.5 mA
20 mA
1.6 V
1.8 V
1.8 V
2.2 V
2.4 V
2.5 V
300
2.5 V
8
A
15
μs
0.5
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-012,E