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BU931Z_10 Datasheet, PDF (2/2 Pages) Unisonic Technologies – NPN POWER DARLINGTON
BU931Z
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation (TC= 25 °C)
Junction Temperature
Storage Temperature
„ ELECTRICAL CHARACTERISTICS
SYMBOL
BVCEO
BVEBO
IC
ICM
IB
IBM
PD
TJ
TSTG
RATINGS
500
5
10
15
1
5
125
+175
-65 ~ +175
UNIT
V
V
A
A
A
A
W
°C
°C
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Inductive Load Storage Time / Fall Time
SYMBOL
TEST CONDITIONS
ICEO VCE = 500 V
IEBO VEB = 5 V
VCL IC = 100mA
VCE(SAT)1 IC = 7 A, IB = 70 mA
VCE(SAT)2 IC = 8 A, IB = 100 mA
VBE(SAT)1 IC = 7 A, IB = 70 mA
VBE(SAT)2 IC = 8 A, IB = 100 mA
hFE VCE = 10 V, IC = 5 A
VF
IF = 8 A
tS
VCC = 12 V, Vclamp = 300 V
L = 7 mH
tF
IC = 7 A, IB = 70 mA
VBE = 0, RBE = 47Ω
MIN TYP MAX UNIT
100 μA
20 mA
400
V
1.6 V
1.8 V
2.2 V
2.4 V
300
2.5 V
15
μs
0.5
μs
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-015,D