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BU931 Datasheet, PDF (2/5 Pages) STMicroelectronics – HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON
BU931
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25Ċ)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (VBE = 0)
VCES
500
V
Collector-Emitter Voltage (IB = 0)
VCEO
400
V
Emitter-Base Voltage (IC = 0)
VEBO
5
V
Collector Current
IC
15
A
Collector Peak Current
ICM
30
A
Base Current
IB
1
A
Base Peak Current
IBM
5
A
Total Dissipation (Tc = 25 Ċ)
PD
175
W
Junction Temperature
TJ
+200
Ċ
Storage Temperature
TSTG
-65 ~ +200
Ċ
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Case Max
SYMBOL
θJC
RATING
1.1
UNIT
Ċ/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cut-off Current (IB = 0)
Emitter Cut-off Current (IC = 0)
Collector-Emitter Saturation Voltage(Note)
ICEO
IEBO
VCE(SAT)
VCE = 450 V
VCE = 450 V, TJ = 125 Ċ
VEB = 5 V
IC = 7 A, IB = 70 mA
IC = 8 A, IB = 100 mA
Base-Emitter Saturation Voltage(Note)
VBE(SAT)
IC = 10 A, IB = 250 mA
IC = 7 A, IB = 70 mA
IC = 8 A, IB = 100 mA
IC = 10 A, IB = 250 mA
DC Current Gain
Diode Forward Voltage
Functional Test
hFE IC = 5 A, VCE = 10 V
VF
IF = 10 A
VCC = 24 V, Vclamp = 400 V
L = 7 mH
Inductive Load Storage Time / Fall Time
tS
tF
Note: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCC = 12 V, Vclamp = 300 V
L = 7 mH
IC = 7 A, IB = 70 mA
VBE = 0, RBE = 47Ω
MIN TYP MAX UNIT
100 µA
0.5 mA
20 mA
1.6 V
1.8 V
1.8 V
2.2 V
2.4 V
2.5 V
300
2.5 V
8
A
15
µs
0.5
µs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-012,A