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| BU407_09 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN EXPITAXIAL PLANAR TRANSISTOR | |||
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BU407
NPN EPITAXIAL SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
330
V
Collector to Emitter Voltage
VCEO
150
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
7
A
Base Current
IB
4
A
Collector Dissipation (Ta =25°С)
PC
60
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
MIN
TYP
 ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
MAX
70
2.08
UNIT
°С/W
°С/W
PARAMETER
Collector Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collect Cutoff Currentâ
Emitter Cutoff Current
DC Current Gain
Current Gain Bandwidth Product
SYMBOL
BVCEO
VCE(SAT)
VBE(SAT)
ICES
IEBO
hFE1
hFE2
hFE3
fT
 CLASSIFICATION OF hFE2
TEST CONDITIONS
IC =100 mA, IB = 0
IC = 5 A, IB = 0.5 A
VCE =400 V
VBE = 6 V, IC = 0
IC = 500 mA, VCE = 5 V
IC = 2 A, VCE = 5 V
IC = 5 A, VCE = 5 V
IC= 500 mA, VCE = 10 V, f =1 MHz
RANK
RANGE
B
35-85
C
75-125
MIN TYP MAX UNIT
150
V
1
V
1.2 V
5 mA
1 mA
25
35
200
10
10
MHZ
D
115-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-020.B
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