BU406_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – SILICON NPN SWITCHING TRANSISTOR

BU406
NPN PLANAR TRANSISTOR
„ ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (I_E=0)
V_CBO
400
V
Collector-Emitter Voltage (V_BE=-1.5V)
V_CEV
400
V
Collector-Emitter Voltage (I_B=0)
V_CEO
200
V
Emitter-Base Voltage (I_C=0)
V_EBO
6
V
Collector Current
I_C
7
A
Collector Peak Current (repetitive)
I_CM
10
A
Collector Peak Current (tp=10ms)
I_CM
15
A
Base Current
I_B
4
A
TO-220/TO-263
60
Collector Dissipation (T_C≤25°C)
TO-220F/TO-220F1
P_C
27
W
TO-3P
65
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
TO-220/TO-263
Thermal Resistance, Junction to Case TO-220F/TO-220F1
TO-3P
SYMBOL
θ_JC
„ ELECTRICAL CHARACTERISTICS (T_A=25°C)
RATINGS
2.08
4.63
1.92
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
V_CE=400V
Collect Cutoff Current (V_BE=0)
I_CES V_CE=250V, T_C=150°C
V_CE=250V
Emitter Cut-off Current (I_C=0)
I_EBO V_BE=6V
Collector-Emitter Saturation Voltage
V_CE(SAT)* I_C=5A, I_B=0.5A
Base-Emitter Saturation Voltage
V_BE(SAT)* I_C=5A, I_B=0.5A
DC Current Gain
h_FE V_CE=10V, I_C=500mA
Transition Frequency
f_T
I_C=500mA, V_CE=10V
Turn-off Time
t_OFF I_C=5A, I_B=0.5A
Second Breakdown Collector Current
Is/b V_CE=40V, t=10ms
Note: Pulse duration=300μs, duty cycle 1.5%.
„ CLASSIFICATION OF h_FE
RANK
RANGE
A
70 ~ 120
MIN TYP MAX UNIT
5 mA
100 μA
1 mA
1 mA
1V
1.2 V
70
240
10
MHz
0.75 μs
4
A
B
110 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-021.F