BTC1510F3_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR TRANSISTOR

BTC1510F3
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
Pulse(Note 2)
IC
10
15
A
T_A=25°C
TO-220/TO-220F
TO-220F1
TO-252
2
W
1.1
W
Collector Dissipation
TO-263
TO-220
PD
2
W
72
W
T_C=25°C
TO-220F/TO-220F1
TO-252
36
W
44
W
TO-263
60
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse test: Pulse Width=100ms
 ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
I_C=100µA, I_E=0
I_C=5mA, I_B=0
Base-Emitter Turn-On Voltage (Note)
V_BE(ON)
V_CE=3V, I_C=5A
V_CE=3V, I_C=10A
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
V_FEC
ICBO
ICEO
IEBO
I_C=5A
V_CB=150V, I_E=0
V_CE=150V, I_E=0
V_EB=5V, I_C=0
ON CHARACTERISTICS
DC Current Gain (Note)
Base-Emitter Saturation Voltage(Note)
hFE
VBE(SAT)
V_CE=3V, I_C=5A
V_CE=3V, I_C=10A
I_C=5A, I_B=5mA
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
I_C=5A, I_B=10mA
I_C=10A, I_B=100mA
I_C=5A, I_B=2.5mA
Note: Pulse test: Pulse Width≦380μs, Duty Cycle≦2%
MIN TYP MAX UNIT
150
V
150
V
2.8
4.5
V
3V
200 µA
200 µA
2 mA
2
20 ^K
100
2
V
1.5
3
V
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R223-002.E