BTB10A Datasheet, PDF (2/3 Pages) Unisonic Technologies – 10A TRIACS

BTB10A
Preliminary
TRIACS
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS On-State Current (Full Sine Wave) T_C=95°C
SYMBOL
I_T(RMS)
RATINGS
10
UNIT
A
Non Repetitive Surge Peak On-State
Current (Full Cycle T_J initial=25°C)
F=50Hz t=20ms
F=60Hz t=16.7ms
I_TSM
100
105
A
A
I²t Value for Fusing
t_P=10ms
I²t
55
A²s
Critical Rate of Rise of On-State Current:
I_G=2xI_GT, tr≤100ns
F=120Hz
T_J=125°C
dI/dt
Non Repetitive Surge Peak Off-State
Voltage
t_P=10ms T_J=25°C V_DSM/V_RSM
50
V_DSM/V_RSM+100
A/µs
V
Peak Gate Current
t_P=20µs T_J=125°C
I_GM
4
A
Average Gate Power Dissipation
T_J=125°C P_G(AV)
1
W
Operating Junction Temperature
Storage Junction Temperature
T_J
-40~+125
°C
T_STG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL RESISTANCES
PARAMETER
Junction to Ambient
Junction to Case (AC)
SYMBOL
θ_JA
θ_JC
RATINGS
60
1.5
 ELECTRICAL CHARACTERISTICS (T_J= 25°C, unless otherwise specified)
UNIT
°C/W
°C/W
FOR SNUBBERLESS (3 QUADRANTS)
PARAMETER
SYMBOL TEST CONDITIONS _MIN
Gate Trigger Current
(Note 1)
Gate Trigger Voltage
Gate Non-Trigger Voltage
Holding Current (Note 2)
Latching Current
I_GT
V_D=12V,
I-II-III
V_GT
R_L=33Ω
I-II-III
V_D=V_DRM,
V_GD
R_L=3.3kΩ, I-II-III 0.2
T_J=125°C
I_H
I_T=500mA
I_L
I_G=1.2I_GT
I-III
II
Critical Rate of Rise of
Off-State Voltage (Note 2)
Critical Rate of Rise of
Off-State Voltage at
Commutation (Note 2)
dV/dt
V_D=67%V_DRM, Gate
Open, T_J=125°C
500
(dI/dt)c
Without Snubber,
T_J=125°C
5.5
Note: 1. Minimum I_GT is guaranteed at 5% of I_GT max.
2. For both polarities of MT2 referenced to MT1.
 STATIC CHARACTERISTICS
CW
TYP MAX
35
1.3
35
50
60
MIN
0.2
1000
9.0
BW
TYP
MAX
50
1.3
50
70
80
UNIT
mA
V
V
mA
mA
mA
V/µs
A/ms
PARAMETER
SYMBOL
Peak On-State Voltage (Note 2)
V_T
Threshold Voltage (Note 2)
V_TO
Dynamic Resistance (Note 2)
R_D
Repetitive Peak Off-State Current
I_DRM
I_RRM
Note: 1. Minimum I_GT is guaranteed at 5% of I_GT max.
2. For both polarities of MT2 referenced to MT1.
TEST CONDITIONS
I_TM=14A, t_P=380μs T_J=25°C
T_J=125°C
T_J=125°C
V_DRM=V_RRM
T_J=25°C
T_J=125°C
MIN TYP MAX UNIT
1.55 V
0.85 V
40 mΩ
5 μA
1 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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