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BTB10 Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Discrete Triacs(Non-Isolated/Isolated)
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BTB10
Preliminary
TRIACS
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS On-State Current (Full Sine Wave) TC=95°C
SYMBOL
IT(RMS)
RATINGS
10
UNIT
A
Non Repetitive Surge Peak On-State
Current (Full Cycle TJ initial=25°C)
F=50Hz t=20ms
F=60Hz t=16.7ms
ITSM
100
105
A
A
I2t Value for Fusing
tP=10ms
I2t
55
A2s
Critical Rate of Rise of On-State Current:
IG=2xIGT, tr≤100ns
F=120Hz
TJ=125°C
dI/dt
Non Repetitive Surge Peak Off-State
Voltage
tP=10ms TJ=25°C VDSM/VRSM
50
VDSM/VRSM+100
A/µs
V
Peak Gate Current
tP=20µs TJ=125°C
IGM
4
A
Average Gate Power Dissipation
TJ=125°C PG(AV)
1
W
Operating Junction Temperature
Storage Junction Temperature
TJ
-40~+125
°C
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL RESISTANCES
PARAMETER
Junction to Ambient
Junction to Case (AC)
SYMBOL
θJA
θJC
RATINGS
60
1.5
 ELECTRICAL CHARACTERISTICS (TJ= 25°C, unless otherwise specified)
UNIT
°C/W
°C/W
FOR STANDARD (4 QUADRANTS)
PARAMETER
SYMBOL
TEST CONDITIONS
C
MIN TYP
MAX
MIN
B
TYP
MAX
UNIT
Gate Trigger Current
(Note 1)
Gate Trigger Voltage
IGT
VD=12V,
VGT
RL=33Ω
I-II-III
IV
ALL
25
50 mA
50
100 mA
1.3
1.3 V
Gate Non-Trigger Voltage
Holding Current (Note 2)
VD=VDRM,
VGD
RL=3.3kΩ, ALL
TJ=125°C
IH
IT=500mA
0.2
0.2
V
25
50 mA
Latching Current
IL
IG=1.2IGT
I-III-IV
II
40
50 mA
80
100 mA
Critical Rate of Rise of
Off-State Voltage (Note 2)
dV/dt
VD=67%VDRM, Gate Open,
TJ=125°C
200
400
V/µs
Critical Rate of Rise of
Off-State Voltage at
Commutation (Note 2)
(dV/dt)c (dI/dt)c=4.4A/ms, TJ= 125°C 5
10
V/µs
 STATIC CHARACTERISTICS
PARAMETER
SYMBOL
Peak On-State Voltage (Note 2)
VT
Threshold Voltage (Note 2)
VTO
Dynamic Resistance (Note 2)
RD
Repetitive Peak Off-State Current
IDRM
IRRM
Note: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1.
TEST CONDITIONS
MIN TYP MAX UNIT
ITM=14A, tP=380μs
VDRM=VRRM
TJ=25°C
TJ=125°C
TJ=125°C
TJ=25°C
TJ=125°C
1.55 V
0.85 V
40 mΩ
5 μA
1 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R401-042.b
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