BTB08A Datasheet, PDF (2/4 Pages) Unisonic Technologies – 8A TRIACS

BTB08A
Preliminary
TRIACS
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS On-State Current (Full Sine Wave) T_C=100°C
SYMBOL
I_T(RMS)
RATINGS
8
UNIT
A
Non Repetitive Surge Peak On-State
Current (Full Cycle T_J initial=25°C)
F=50Hz t=20ms
F=60Hz t=16.7ms
I_TSM
80
84
A
A
I²t Value for Fusing
t_P=10ms
I²t
36
A²s
Critical Rate of Rise of On-State Current:
I_G=2xI_GT, tr≤100ns
F=120Hz T_J=125°C
dI/dt
50
A/µs
Peak Gate Current
t_P=20µs T_J=125°C
I_GM
4
A
Average Gate Power Dissipation
T_J=125°C P_G(AV)
1
W
Operating Junction Temperature
T_J
-40~+125
°C
Storage Junction Temperature
T_STG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL RESISTANCES
PARAMETER
Junction to Ambient
Junction to Case (AC)
SYMBOL
θ_JA
θ_JC
RATINGS
60
1.6
 ELECTRICAL CHARACTERISTICS (T_J= 25°C, unless otherwise specified)
UNIT
°C/W
°C/W
FOR SNUBBERLESS AND LOGIC LEVEL (3 QUADRANTS)
PARAMETER
SYMBOL
TEST
CONDITIONS
TW
MIN TYP MAX
MIN
SW
CW
TYP MAX MIN TYP MAX
MIN
BW
TYP
MAX
UNIT
Gate Trigger
Current (Note 1)
I_{GT VD=12V} I-II-III
5
10
35
Gate Trigger
Voltage
V_GT ^RL=30Ω I-II-III
1.3
1.3
1.3
50 mA
1.3 V
Gate Non-Trigger
Voltage
V_GD
V_D=V_DRM,
R_L=3.3kΩ, I-II-III 0.2
T_J=125°C
Holding Current
(Note 2)
I_H I_T=100mA
0.2
10
0.2
15
0.2
35
V
50 mA
Latching Current
I_L
I_G=1.2I_GT
I-III
II
10
25
50
15
30
60
70 mA
80 mA
Critical Rate of
V_D=67%V_DRM,
Rise of Off-State dV/dt Gate Open,
20
40
400
1000
V/µs
Voltage(Note 2)
T_J=125°C
Critical Rate of
(dV/dt)c=0.1V/µs,
T_J=125°C
3.5
5.4
A/ms
Rise of Off-State
Voltage at
Commutation
(dI/dt)c
(dV/dt)c=10V/µs,
T_J=125°C
1.5
2.98
A/ms
(Note 2)
Without Snubber
T_J= 125°C
4.5
7
A/ms
Note: 1. Minimum I_GT is guaranteed at 5% of I_GT max.
2. For both polarities of MT2 referenced to MT1.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R401-059.a