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BTA40 Datasheet, PDF (2/3 Pages) STMicroelectronics – 40A TRIACs
BTA40
Preliminary
TRIACS
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
On-State RMS Current (Full Sine Wave) TC=80°C
IT(RMS)
40
A
Non Repetitive Surge Peak On-State
Current (Full Cycle, TJ initial=25°C)
F=50Hz, t=20ms
F=60Hz, t=16.7ms
ITSM
I2t Value for Fusing
tp=10ms
I2t
400
A
420
A
1000
A2s
Critical Rate of Rise of
IG=2xIGT, tr≤100ns
On-State Current:
F=120Hz, TJ=125°C
Non Repetitive Surge Peak Off-State
Voltage
tp=10ms, TJ=25°C
dI/dt
VDSM/VRSM
50
VDSM/VRSM+100
A/µs
V
Peak Gate Current
tp=20µs, TJ=125°C
IGM
8
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Operating Junction Temperature
Storage Junction Temperature
TJ
-40~+125
°C
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 DEVICE SUMMARY
PARAMETER
On-State RMS Current
Repetitive Peak Off-State Voltage
Triggering Gate Current
 THERMAL RESISTANCES
SYMBOL
IT(RMS)
VDRM/VRRM
IGT
RATINGS
40
600
50
UNIT
A
V
mA
PARAMETER
Junction to Ambient
Junction to Case (AC)
SYMBOL
θJA
θJC
RATINGS
50
0.9
 ELECTRICAL CHARACTERISTICS (TJ=25 °C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
Gate Trigger Current (Note 1)
Gate Trigger Voltage
Gate Non-Trigger Voltage
Holding Current (Note 2)
Latching Current
Critical Rate of Rise of Off-State
Voltage (Note 2)
SYMBOL
IGT
VGT
VGD
IH
IL
TEST CONDITIONS
I-II-III
VD=12V, RL=33Ω
IV
ALL
VD=VDRM, RL=3.3kΩ,
TJ=125°C
ALL
IT=500mA
IG=1.2IGT
I-III-IV
II
MIN TYP MAX UNIT
50 mA
100 mA
1.3 V
0.2
V
80 mA
70 mA
160 mA
dV/dt VD=67%VDRM, Gate Open, TJ=125°C 500
V/µs
Critical Rate of Rise of Off-State
Voltage at Commutation (Note 2)
(dV/dt)c (dI/dt)c=20A/ms, TJ=125°C
10
V/µs
 STATIC CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Peak On-State Voltage (Note 2)
Threshold Voltage (Note 2)
VTM
ITM=60A, tp=380μs, TJ=25°C
VTO
TJ=125°C
Dynamic Resistance (Note 2)
RD
TJ=125°C
Repetitive Peak Off-State Current
IDRM
IRRM
VDRM=VRRM, TJ=25°C
VDRM=VRRM, TJ=125°C
Notes: 1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
1.55 V
0.85 V
10 mΩ
5 µA
5 mA
2 of 3
QW-R401-048.a