BT138 Datasheet, PDF (2/5 Pages) NXP Semiconductors – Triacs

UTC BT138
TRIAC
THERMAL RESISTANCES
PARAMETER
Thermal Resistance, Junction to Mounting Base
Full cycle
Half cycle
Thermal Resistance, Junciton to Ambient
In free air
SYMBOL
Rθj-mb
Rθj-a
MIN TYP
60
MAX
1.5
2.0
-
UNIT
°C /W
°C /W
STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Gate Trigger Current
VD=12V, IT=0.1A
T2+G+
T2+G-
IGT
T2-G-
T2-G+
Latching Current
VD=12V, IGT =0.1A
T2+G+
T2+G-
IL
T2-G-
T2-G+
Holding Current
IH
VD=12V, IGT=0.1A
On-State Voltage
VT
IT=15A
Gate Trigger Voltage
VD=12V, IT=0.1A
VGT
VD=400V, IT=0.1A, Tj=125°C
Off-state Leakage Current
ID
VD=VDRM(max) , Tj=125°C
MIN TYP MAX UNIT
5
35
8
35 mA
10 35
12 70
7
40
20 60 mA
8
40
10 60
6
30 mA
1.4 1.65 V
0.7 1.5
0.25 0.4
V
0.1 0.5 mA
DYNAMIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Critical Rate Of Rise Of Off-State
VDM=67% VDRM(max), Tj=125°C 100
Voltage
dVD/dt Exponential waveform,
Gate open circuit
Critical Rate Of Change
VDM=400V,Tj=95°C, IT(RMS)=12A
Of Commutating Voltage
dVcom/dt dlcom/dt =5.4A/ms,
Gate open circuit
Gate Controlled Turn-on Time
ITM=16A, VD=VDRM(max),
tgt
IG=0.1A dIG/dt=5A/µs
TYP MAX
250
20
2
UNIT
V/µs
V/µs
µs
UTC UNISONIC TECHNOLOGIES CO., LTD. ²
QW-R401-002,A