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| BD435 Datasheet, PDF (2/3 Pages) ON Semiconductor – Plastic Medium Power Silicon NPN Transistor | |||
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BD435
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
32
V
Collector-Emitter Voltage
VCEO
32
V
Collector-Emitter Voltage
VCES
32
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
IC
Collector Current (Pulse) (Note 1)
ICP
4
A
7
A
Base Current
IB
Collector Dissipation (TC=25°C)
Pc
1
A
36
W
Junction Temperature
Storage Temperature
TJ
150
°C
TSTG
-65 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted)
PARAMETER
Collector-Emitter Sustaining Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
VCEO(SUS)
ICBO
ICEO
IEBO
DC Current Gain (Note 1)
hFE
Collector-Emitter Saturation Voltage (Note 1) VCE(SAT)
Base-Emitter ON Voltage (Note 1)
VBE(ON)
Current Gain Bandwidth Product
fT
Note: Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed
TEST CONDITIONS
IC=100mA, IB=0A
VCB=32V, IE=0
VCE=32V, VBE=0
VEB=5V, IC=0
VCE=5V, IC=10mA
VCE=1V, IC=500mA
VCE=1V, IC=2A
IC=2A, IB=0.2A
VCE=1V, IC=2A
VCE=1V, IC=250mA
MIN TYP MAX UNIT
32
V
100 µA
100 µA
1
mA
40 130
85 140
50
0.2 0.5
V
1.1
V
3
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R221-026.A
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