BCP69_09 Datasheet, PDF (2/3 Pages) Unisonic Technologies – PNP MEDIUM POWER TRANSISTOR

BCP69
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
V_CBO
-32
V
Collector-Emitter Voltage (Open Base)
V_CEO
-20
V
Emitter-Base Voltage (Open Collector)
V_EBO
-5
V
Collector Current (DC)
I_C
-1
A
Peak Collector Current
I_CM
-2
A
Peak Base Current
I_BM
-200
mA
Total Power Dissipation, Ta ≤25°C
P_D
1.35
W
Junction Temperature
T_J
150
°C
Operating Temperature
T_OPR
-45 ~ +150
°C
Storage Temperature
T_STG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
Junction to Ambient
PARAMETER
SYMBOL
θ_JA
RATINGS
91
„ ELECTRICAL CHARACTERISTICS (T_J = 25°C, unless otherwise specified.)
UNIT
K/W
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC current gain ratio of the
complementary pairs
SYMBOL
TEST CONDITIONS
V_CE(SAT) I_C = -1A, I_B = -100mA
V_BE
I_C = -5mA, V_CE = -10V
I_C = -1A, V_CE = -1V
I_CBO
I_E = 0, V_CB = -25V
I_E = 0, V_CB = -25V, T_J = 150°C
I_EBO I_C = 0, V_EB = -5V
I_C = -5mA, V_CE = -10V
h_FE I_C = -500mA, V_CE = -1V
I_C = -1A, V_CE = -1V
C_C I_E = i_e = 0, V_CB = -5V, f = 1MHz
f_T
h_FE1
h_FE2
I_C = -10mA, V_CE = -5V, f = 100MHz
|I_C| = 0.5A, |V_CE| = 1V
„ CLASSIFICATION OF h_FE
RANK
RANGE
16
100~250
MIN TYP MAX UNIT
-500 mV
-620
mV
-1 V
-100 nA
-10 µA
-100 nA
50
85
375
60
48
pF
40
MHz
1.6
25
160~375
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-009.D