BCP69 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP medium power transistor

BCP69
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
V_CBO
-32
V
Collector-Emitter Voltage (Open Base)
V_CEO
-20
V
Emitter-Base Voltage (Open Collector)
V_EBO
-5
V
Collector Current (DC)
I_C
-1
A
Peak Collector Current
I_CM
-2
A
Peak Base Current
I_BM
-200
mA
Total Power Dissipation, Ta ≤ 25Ċ
P_D
1.35
W
Junction Temperature
T_J
150
Ċ
Operating Ambient Temperature
T_OPR
-45 ~ +150
Ċ
Storage Temperature
T_STG
-65 ~ +150
Ċ
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance From Junction To Ambient (Note 1)

SYMBOL
θ_JA
RATINGS
91
UNIT
K/W
ELECTRICAL CHARACTERISTICS (T_J = 25Ċ, unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC current gain ratio of the
complementary pairs
SYMBOL
TEST CONDITIONS
V_CE(SAT)
V_BE
I_C = -1A, I_B = -100mA
I_C = -5mA, V_CE = -10V
I_C = -1A, V_CE = -1V
I_CBO
I_E = 0, V_CB = -25V
I_E = 0, V_CB = -25V, T_J = 150Ċ
I_EBO I_C = 0, V_EB = -5V
I_C = -5mA, V_CE = -10V
h_FE I_C = -500mA, V_CE = -1V
I_C = -1A, V_CE = -1V
C_C I_E = i_e = 0, V_CB = -5V, f = 1MHz
f_T
I_C = -10mA, V_CE = -5V, f = 100MHz
h_FE1
h_FE2
|I_C| = 0.5A, |V_CE| = 1V
CLASSIFICATION OF h_FE
RANK
RANGE


16
100~250
MIN TYP MAX UNIT
-500 mV
-620
mV
-1 V
-100 nA
-10 µA
-100 nA
50
85
375
60
48
pF
40
MHz
1.6
25
160~375
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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