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| BCP68_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors | |||
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BCP68
NPN SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TA=25ï°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
VCBO
32
V
Collector-Emitter Voltage (Open Base)
VCEO
20
V
Emitter-Base Voltage (Open Collector)
Collector Current
DC
Peak
Peak Base Current
VEBO
IC
ICM
IBM
5
V
1
A
2
A
200
mA
Total Power Dissipation (TA ⤠25â)
PD
Junction Temperature
TJ
1.35
W
150
â
Operating Temperature
Storage Temperature
TOPR
TSTG
-45 ~ +150
â
-65 ~ +150
â
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL DATA
PARAMETER
Junction To Ambient
SYMBOL
θJA
RATINGS
91
ï® ELECTRICAL CHARACTERISTICS (TJ = 25â, unless otherwise specified.)
UNIT
â/W
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC Current Gain Ratio of the
Complementary Pairs
SYMBOL
TEST CONDITIONS
VCE(SAT) IC = 1A, IB =100mA
VBE
IC = 5mA, VCE = 10V
IC = 1A, VCE = 1V
ICBO
IE = 0, VCB = 25V
IE = 0, VCB = 25V, TJ = 150â
IEBO IC = 0, VEB = 5V
IC = 5mA, VCE = 10V
hFE IC = 500mA, VCE = 1V
IC = 1A, VCE = 1V
CC IE = ie = 0, VCB = 5V, f = 1MHz
fT
IC = -10mA, VCE = -5V, f = 100MHz
hFE1
hFE2
|IC| = 0.5A, |VCE| = 1V
ï® CLASSIFICATION OF hFE
RANK
RANGE
16
100~250
MIN TYP MAX UNIT
500 mV
620
mV
1V
100 nA
10 µA
100 nA
50
85
375
60
48
pF
40
MHz
1.6
25
160~375
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R207-008.F
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