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| BCP68_12 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN MEDIUM POWER TRANSISTOR | |||
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BCP68
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (TA=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
VCBO
32
V
Collector-Emitter Voltage (Open Base)
VCEO
20
V
Emitter-Base Voltage (Open Collector)
VEBO
5
V
DC
Collector Current
IC
Peak
ICM
1
A
2
A
Peak Base Current
Total Power Dissipation (TA ⤠25â)
Junction Temperature
Operating Temperature
Storage Temperature
IBM
PD
TJ
TOPR
TSTG
200
mA
1.35
W
150
â
-45 ~ +150
â
-65 ~ +150
â
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction To Ambient
θJA
91
 ELECTRICAL CHARACTERISTICS (TJ = 25â, unless otherwise specified.)
UNIT
â/W
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC Current Gain Ratio of the
Complementary Pairs
SYMBOL
TEST CONDITIONS
VCE(SAT) IC = 1A, IB =100mA
VBE
IC = 5mA, VCE = 10V
IC = 1A, VCE = 1V
ICBO
IE = 0, VCB = 25V
IE = 0, VCB = 25V, TJ = 150â
IEBO IC = 0, VEB = 5V
IC = 5mA, VCE = 10V
hFE IC = 500mA, VCE = 1V
IC = 1A, VCE = 1V
CC IE = ie = 0, VCB = 5V, f = 1MHz
fT
IC = -10mA, VCE = -5V, f = 100MHz
hFE1
hFE2
|IC| = 0.5A, |VCE| = 1V
 CLASSIFICATION OF hFE
RANK
RANGE
16
100~250
MIN TYP MAX UNIT
500 mV
620
mV
1V
100 nA
10 µA
100 nA
50
85
375
60
48
pF
40
MHz
1.6
25
160~375
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R207-008,E
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