BCP68_09 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN MEDIUM POWER TRANSISTOR

BCP68
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
V_CBO
32
V
Collector-Emitter Voltage (Open Base)
V_CEO
20
V
Emitter-Base Voltage (Open Collector)
V_EBO
5
V
Collector Current
DC
I_C
1
A
Peak
I_CM
2
A
Peak Base Current
Total Power Dissipation (Ta ≤ 25℃)
Junction Temperature
Operating Temperature
Storage Temperature
I_BM
200
mA
P_D
1.35
W
T_J
150
℃
T_OPR
-45 ~ +150
℃
T_STG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Thermal Resistance From Junction To Ambient
SYMBOL
θ_JA
RATINGS
91
UNIT
℃/W
„ ELECTRICAL CHARACTERISTICS (T_J = 25℃, unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC Current Gain Ratio of the
Complementary Pairs
SYMBOL
TEST CONDITIONS
V_CE(SAT) I_C = 1A, I_B =100mA
V_BE
I_C = 5mA, V_CE = 10V
I_C = 1A, V_CE = 1V
I_CBO
I_E = 0, V_CB = 25V
I_E = 0, V_CB = 25V, T_J = 150℃
I_EBO I_C = 0, V_EB = 5V
I_C = 5mA, V_CE = 10V
h_FE I_C = 500mA, V_CE = 1V
I_C = 1A, V_CE = 1V
C_C I_E = i_e = 0, V_CB = 5V, f = 1MHz
f_T
I_C = -10mA, V_CE = -5V, f = 100MHz
h_FE1
h_FE2
|I_C| = 0.5A, |V_CE| = 1V
„ CLASSIFICATION OF h_FE
MIN TYP MAX UNIT
500 mV
620
mV
1V
100 nA
10 µA
100 nA
50
85
375
60
48
pF
40
MHz
1.6
RANK
RANGE
16
100~250
25
160~375
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-008,D