BC858_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – SWITCHING AND AMPLIFIER APPLICATION

BC856/BC857/BC858
PNP SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
BC856
-80
V
Collector-Base Voltage
BC857
V_CBO
-50
V
BC858
-30
V
BC856
-65
V
Collector-Emitter Voltage
BC857
V_CEO
-45
V
BC858
-30
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Dissipation
P_D
310
mW
Collector Current (DC)
I_C
-100
mA
Junction Temperature
T_J
+150
C
Storage Temperature
T_STG
-40 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
I_CBO
h_FE
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
f_T
Cob
NF
V_CB=-30V, I_E=0
V_CE=-5V, I_C=-2mA
I_C=-10mA,I_B=-0.5mA
I_C=-100mA,I_B=-5mA
I_C=-10mA,I_B=-0.5mA
I_C=-100mA,I_B=-5mA
V_CE=-5V,I_C=-2mA
V_CE=-5V,I_C=-10mA
V_CE=-5V,I_C=-10mA, f=100MHz
V_CB=-10V,I_E=0,f=1MHz
V_CE=-5V, I_C=-200A, f=1KHz, R_G=2K
 CLASSIFICATION OF h_FE
MIN
110
-600
TYP
-90
-250
-700
-900
-660
150
2
MAX UNIT
-15 nA
800
-300 mV
-650 mV
mV
mV
-750 mV
-800 mV
MHz
6 pF
10 dB
RANK
RANGE
A
110-220
B
200-450
C
420-800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-028.F