BC856AS Datasheet, PDF (2/3 Pages) Diodes Incorporated – DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

BC856AS
Preliminary
DUAL TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
-80
V
V_CEO
-65
V
Emitter-Base Voltage
Collector Current
V_EBO
-5.0
V
I_C
-100
mA
Peak Collector Current
Peak Emitter Current
I_CM
-200
mA
I_EM
-200
mA
Power Dissipation
Operating Temperature Range
P_D
200
mW
T_J
-65~+150
°C
Storage Temperature
T_STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient
θ_JA
Note: Device mounted on FR-4 PCB minimum land pad.
RATINGS
625
 ELECTRICAL CHARACTERISTICS (T_A =25°C unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C=10μA, I_B=0
I_C=10mA, I_B=0
I_E=1μA, I_C=0
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
h_FE
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
V_CE=-5.0V, I_C=-2.0mA
I_C=-10mA, I_B=-0.5mA
I_C=-100mA, I_B=-5.0mA
I_C=-10mA, I_B=-0.5mA
I_C=-100mA, I_B=-5.0mA
V_CE=-5.0V, I_C=-2.0mA
V_CE=-5.0V, I_C=-10mA
SMALL SIGNAL CHARACTERISTICS
I_CES V_CE=-80V
Collector-Cutoff Current
I_CBO
V_CB=-30V
V_CB=-30V, T_A=150°C
Gain Bandwidth Product
f_T
V_CE=-5.0V, I_C=-10mA,
f=100MHz
Collector-Base Capacitance
C_CB V_CB=-10V, f=1.0MHz
Note: Short duration pulse test used to minimize self-heating effect.
MIN TYP MAX UNIT
-80
V
-65
V
-5
V
125 180 250
-75 -300 mV
-250 -650 mV
-700
mV
-850
mV
-600 -650 -750 mV
-820 mV
-15 nA
-15 nA
-4.0 µA
100
MHz
3
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-108.b