BC337_09 Datasheet, PDF (2/3 Pages) Unisonic Technologies – SWITCHING AND AMPLIFIER APPLICATIONS

BC337/BC338
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
BC337
BC338
V_CES
50
V
30
V
Collector-Emitter Voltage
BC337
BC338
V_CEO
45
V
25
V
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Derate above 25°C
V_EBO
I_C
P_C
5
V
800
mA
625
mW
5
mW/°C
Junction Temperature
T_J
125
°C
Operating Temperature
T_OPR
-20 ~ +85
°C
Storage Temperature
T_STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
Junction to Case
θ_JA
200
θ_Jc
83.3
„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
Collector-Emitter Breakdown Voltage ^BC337
BC338
Collector-Emitter Breakdown Voltage ^BC337
BC338
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BC337
BC338
DC Current Gain
Collector-emitter saturation voltage
Base-emitter on voltage
Output Capacitance
Current gain bandwidth product
SYMBOL
TEST CONDITIONS
BV_CEO I_C=10mA, I_B=0
BV_CES I_C=0.1mA, V_BE=0
BV_EBO
I_CES
h_FE1
h_FE2
V_CE(SAT)
V_BE(ON)
C_ob
f_T
I_E=0.1mA, I_C=0
V_CE=45V, I_B=0
V_CE=25V, I_B=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=300mA
I_C=500mA, I_B=50mA
V_CE=1V, I_C=300mA
V_CB=10V, I_E=0, f=1MHz
V_CE=5V, I_C=10mA, f=50MHz
„ CLASSIFICATION OF h_FE1
RANK
h_FE1
16
100-250
25
160-400
MIN TYP MAX UNIT
45
V
25
V
50
V
30
V
5
V
2 100 nA
2 100 nA
100
630
60
0.7 V
1.2 V
12
pF
100
MHz
40
250-630
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-039.C