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9N90_10 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 900V N-CHANNEL MOSFET
9N90
Power MOSFET
„ ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TC = 25°C)
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed(Note 3)
Repetitive(Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
900
V
±30
V
9.0
A
36
A
9.0
A
900
mJ
28
mJ
4.0
V/ns
TO-247
160
W
Power Dissipation
TO-3P
TO-220F1
PD
TO-247
Linear Derating Factor
TO-3P
above TC = 25°C
TO-220F1
240
36
1.28
2.22
0.288
W
W/°C
W/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction-to-Case
TO-247
TO-3P
TO-220F1
TO-247
TO-3P
TO-220F1
SYMBOL
θJA
θJC
RATINGS
50
40
62.5
0.78
0.52
3.47
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250μA
Drain-Source Leakage Current
IDSS
VDS = 900 V, VGS = 0 V
Forward
Gate-Body Leakage Current
Reverse
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ ID = 250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON) VGS = 10 V, ID = 4.5 A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
MIN TYP MAX UNIT
900
V
10 μA
100 nA
-100 nA
0.99
V/°C
3.0
5.0 V
1.12 1.4 Ω
2100 2730 pF
175 230 pF
14 18 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-217.E