9N65 Datasheet, PDF (2/5 Pages) Unisonic Technologies – 9A, 650V N-CHANNEL POWER MOSFET

9N65
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_J=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
650
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous, @TC=25°C
V_GSS@10V @T_C=100°C
I_D
9
A
5.4
A
Pulsed (Note 2)
I_DM
36
A
Avalanche Current (Note 2)
I_AR
5.2
A
Avalanche Energy
Single Pulsed (Note 2)
E_AR
Repetitive (Note 3)
E_AS
16
mJ
375
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
2.8
V/ns
TO-220
Power Dissipation(@T_C=25°C)
TO-220F
TO-220
P_D
Linear Derating Factor
TO-220F
167
44
W
1.3
W/°C
0.35
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Starting T_J=25°C, L=9.25mH, R_G=25Ω, I_AS=9A.
4. I_SD≤5.2A, di/dt≤90A/µs, V_DD≤BV_DSS, T_J≤150°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
TO-220
TO-220F
SYMBOL
θ_JA
θ_JC
RATINGS
62
62.5
0.75
2.86
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-618.d