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90N02 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 90A, 20V N-CHANNEL POWER MOSFET
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90N02
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
VDSS
20
V
Gate-Source Voltage
VGSS
±20
V
Drain Current Continuous (TC<135°C, VGS=10V)
ID
Pulsed
IDM
90
A
360
A
Single Pulsed Avalanche Energy (Note 3)
EAS
168
mJ
Power Dissipation
PD
54
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ=25~150°C
3. Starting TJ=25°C , L = 0.42mH, IAS = 90A
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
2.3
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V
Gate-Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=90A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=20V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge at 20V
QG
Gate to Source Charge
QGS
VDD=20V, ID=90A, RL=0.4Ω
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=20V, ID=90A, RL=0.4Ω,
VGS=10V, RGS=2.5 Ω
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=90A
MIN TYP MAX UNIT
20
V
1 µA
+100 nA
-100 nA
0.9 2.8 2.5 V
5.1 7 mΩ
3565
pF
1310
pF
395
pF
46 60 nC
6.9
nC
9.8
nC
9
ns
106
ns
53
ns
41
ns
0.9 1.25 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-751.a
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