9015_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – PRE-AMPLIFIER, LOW LEVEL & LOW NOISE

9015
PNP EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-50
V
Collector-Emitter Voltage
V_CEO
-45
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-100
mA
Collector Dissipation
Junction Temperature
Storage Temperature
P_C
T_J
T_STG
450
mW
+150
°C
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
SYMBOL
BV_CBO
BV_CEO
BV_EBO
V_CE(sat)
V_BE(sat)
V_BE(on)
I_CBO
I_EBO
h_FE
C_ob
f_T
NF
TEST CONDITIONS
I_C = -100μA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -100μA, I_C = 0
I_C = -100mA, I_B = -5mA
I_C = -100mA, I_B = -5mA
V_CE = -5V, I_C = -2mA
V_CB = -50V, I_E =0
V_EB = -5V, I_C =0
V_CE =-5V, I_C = -1mA
V_CB = -10V, I_E =0, f =1MHz
V_CE = -5V, I_C = -10mA
V_CE = -5V, I_C = -0.2mA
f = 1KHz, Rs = 1KΩ
MIN TYP MAX UNIT
-50
V
-45
V
-5
V
-0.2 -0.7 V
-0.82 -1.0 V
-0.6 -0.65 -0.75 V
-50 nA
-100 nA
60 200 600
4.5 7.0 pF
100 190
MHz
0.7 10 dB
„ CLASSIFICATION OF h_FE
RANK
RANGE
A
60-150
B
100-300
C
200-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-032.D