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9013_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
9013
NPN EPITAXIAL SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Collector dissipation
PC
625
mW
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(on)
 CLASSIFICATION OF hFE1
TEST CONDITIONS
IC=-100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=1V, IC=10mA
MIN TYP MAX UNIT
40
V
20
V
5
V
100 nA
100 nA
64
120
40
120
300
0.16 0.6
V
0.91 1.2
V
0.6 0.67 0.7
V
RANK
RANGE
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-030.C