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80N08 Datasheet, PDF (2/3 Pages) Unisonic Technologies – N-CHANNEL 80V (D-S) MOSFET
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80N08
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
RATINGS
Continuous Drain Current (Note 1)
ID
TC=25 °C, VGS=10 V
TC=100 °C, VGS=10 V (Note 2)
80
80
Pulsed Drain Current (Note 2)
ID,pulse TC=25 °C
320
Avalanche Energy, Single Pulse (Note 2) EAS ID=80A
810
Gate Source Voltage (Note 3)
VGS
±20
Power Dissipation
PTOT TC=25 °C
300
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
UNIT
A
A
mJ
V
W
°C
°C
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62
0.5
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
K/W
K/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=1mA, VGS=0V
80
Drain-Source Leakage Current
IDSS
VDS=75V, VGS=0V, TJ=25°C
VDS=75V, VGS=0V, TJ=125°C 2
0.01
1
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=20V
1
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
2.1 3.0
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS (Note 2)
RDS(ON) VGS=10V, ID=80A
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
4700
1260
Reverse Transfer Capacitance
CRSS
580
SWITCHING PARAMETERS (Note 2)
Gate to Source Charge
Gate to Drain Charge
QGS
25
QGD
VDD=60V, VGS=0~10V, ID=80A
69
Total Gate Charge
QG
144
Gate Plateau Voltage
Vplateau
5.4
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
tD(ON)
26
tR
VDD=40V, RG=2.2Ω
50
tD(OFF)
ID=80A, VGS=10V
61
Fall-Time
tF
30
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Pulsed Current
IS
IS, pulse
TC=25°C (Note 2)
Drain-Source Diode Forward Voltage (Note1)
VSD
IF=80A, VGS=0V, TJ=25°C
0.9
Reverse Recovery Time (Note 2)
tRR
IF= IS, dIF/dt=100A/µs
110
Reverse Recovery Charge (Note 2)
QRR
VR=40V
470
Note: 1. Current is limited by bondwire; with an θJC= 0.5K/W the chip is able to carry 132A at 25°C.
2. Defined by design. Not subject to production test.
3. Qualified at -20V and +20V.
MAX
1
100
100
4.0
12
37
116
180
80
320
1.3
140
590
UNIT
V
µA
nA
V
mΩ
pF
pF
pF
nC
nC
nC
V
ns
ns
ns
ns
A
V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-468.a
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