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| 8050S_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR | |||
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8050S
NPN SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
700
mA
Collector Dissipation(TA=25°C)
SOT-23
TO-92
PC
350
mW
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain (note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC = 100μA, IE = 0
BVCEO IC = 1mA, IB = 0
BVEBO
ICBO
IE = 100μA, IC =0
VCB = 30V,IE = 0
IEBO
hFE1
VEB = 5V, IC = 0
VCE = 1V, IC = 1mA
hFE2
hFE3
VCE = 1V, IC = 150 mA
VCE = 1V, IC = 500mA
VCE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) VCE = 1V, IC = 10mA
fT
VCE = 10V, IC = 50mA
Cob VCB = 10V, IE = 0, f = 1MHz
ï® CLASSIFICATION OF hFE2
MIN TYP MAX UNIT
30
V
20
V
5
V
1 uA
100 nA
100
120
400
40
0.5 V
1.2 V
1.0 V
100
MHz
9.0
pF
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-001.I
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