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8050S_11 Datasheet, PDF (2/4 Pages) Unisonic Technologies – LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR | |||
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8050S
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
30
V
20
V
Emitter-Base Voltage
Collector Current
VEBO
IC
5
V
700
mA
SOT-23
Collector Dissipation(TA=25°C)
TO-92
PC
350
mW
1
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC = 100μA, IE = 0
BVCEO IC = 1mA, IB = 0
BVEBO IE = 100μA, IC =0
ICBO VCB = 30V,IE = 0
IEBO VEB = 5V, IC = 0
hFE1 VCE = 1V, IC = 1mA
hFE2 VCE = 1V, IC = 150 mA
hFE3 VCE = 1V, IC = 500mA
VCE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) IC = 500mA, IB = 50mA
VBE(SAT) VCE = 1V, IC = 10mA
fT
VCE = 10V, IC = 50mA
Cob VCB = 10V, IE = 0, f = 1MHz
 CLASSIFICATION OF hFE2
MIN TYP MAX UNIT
30
V
20
V
5
V
1 uA
100 nA
100
400
120
40
0.5 V
1.2 V
1.0 V
100
MHz
9.0
pF
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-001,F
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