7N65Z Datasheet, PDF (2/6 Pages) Unisonic Technologies – 7.4A, 650V N-CHANNEL POWER MOSFET

7N65Z
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
SYMBOL
V_DSS
V_GSS
I_AR
I_D
I_DM
E_AS
E_AR
dv/dt
RATINGS
650
±30
7.4
7.4
29.6
600
14.2
4.5
UNIT
V
V
A
A
A
mJ
mJ
V/ns
Power Dissipation
P_D
142
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, I_AS = 7.4A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD ≤7.4A, di/dt≤200A/μs, V_DD≤BV_DSS, Starting T_J = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
0.88
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-586.B