6N65Z-Q Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

6N65Z-Q
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
V_DSS
V_GSS
I_AR
I_D
I_DM
E_AS
E_AR
dv/dt
650
V
±20
V
6.2
A
6.2
A
24.8
A
100
mJ
13
mJ
4.5
ns
Power Dissipation
P_D
40
W
Junction Temperature
T_J
+150
°C
Operating Temperature
T_OPR
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J.
3. L = 14mH, I_AS = 3.7A, V_DD = 90V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD ≤ 6.2A, di/dt ≤200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATING
62.5
3.2
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-978. A