60N05 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 60A, 50V N-CHANNEL POWER MOSFET

60N05
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V_GS=0)
V_DSS
50
V
Drain-Gate Voltage (R_GS=20k Ω)
V_DGR
50
V
Gate-Source Voltage
V_GSS
±20
V
Drain Current
Continuous
T_C=25°C
T_C=100°C
I_D
60
A
50
A
Pulsed (Note 1)
I_DM
240
A
Avalanche Current
I_AR
60
A
Avalanche Energy
E_AS
600
mJ
E_AR
150
mJ
Power Dissipation
P_D
125
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
1
„ ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BV_DSS
I_DSS
I_GSS
I_D=250µA, V_GS=0V
V_DS=Max Rating, V_GS=0V
V_GS=+20V, V_DS=0V
V_GS=-20V, V_DS=0V
V_GS(TH)
R_DS(ON)
V_DS=V_GS, I_D=250µA
V_GS=10V, I_D=30A
C_ISS
C_OSS
C_RSS
V_GS=0V, V_DS=25V, f=1.0MHz
MIN TYP MAX UNIT
60
V
250 µA
+100 nA
-100 nA
234 V
0.012 0.014 Ω
3900
pF
950
pF
250
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-716.a