4N70-E Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

4N70-E
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_A = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
700
V
±30
V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
I_AR
I_D
I_DM
E_AS
E_AR
dv/dt
4.4
A
4.4
A
17.6
A
160
mJ
10.6
mJ
4.5
V/ns
Power Dissipation
TO-220F1
TO-220F2
P_D
36
46
W
Junction Temperature
Operating Temperature
T_J
T_OPR
+150
°С
-55 ~ +150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 20mH, I_AS = 4A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD≤ 4.4A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F1
TO-220F2
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
3.47
3.00
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-A72.A