4128D Datasheet, PDF (2/3 Pages) Unisonic Technologies – MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

4128D
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (V_BE=0)
V_CES
350
V
Collector-Emitter Voltage (I_B=0)
V_CEO
200
V
Emitter-Base Voltage
V_EBO
7
V
Collector Current
DC
I_C
Pulse (Note 2)
I_CP
5
A
10
A
Base Current
DC
I_B
Pulse (Note 2)
I_BP
2
A
4
A
Total Dissipation
P_C
40
W
Junction Temperature
T_J
150
°C
Storage Temperature Range
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.
„ THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
SYMBOL
θ_JC
„ ELECTRICAL CHARACTERISTICS
RATINGS
3.125
UNIT
°C/W
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Storage Time
Fall Time
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_CEO
I_EBO
V_CE(SAT)1
V_CE(SAT)2
V_BE(SAT)
h_FE1
h_FE2
f_T
t_S
t_F
TEST CONDITIONS
I_C=1mA, I_B=0
I_C=10mA, I_B=0
I_E=1mA, I_C=0
V_CB=350V, I_E=0
V_CE=200V, I_B=0
V_EB=7V, I_C=0
I_C=1A, I_B=0.2A
I_C=3A, I_B=0.6A
I_C=3A, I_B=0.6A
I_C=0.8A,V_CE=5V
I_C=3A,V_CE=5V
I_C=0.5A, V_CE=10V
V_CC=24V, I_C=0.5A, I_B1=-I_B2=0.1A
MIN TYP MAX UNIT
350
V
200
V
7
V
100 µA
50 µA
10 μA
0.8 V
1.5 V
1.6 V
8
50
8
4
MHz
4 μs
0.7 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R204-029.A