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| 3N80_11 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 3 Amps, 800 Volts N-CHANNEL POWER MOSFET | |||
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3N80
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0V)
VDSS
800
V
Drain-Gate Voltage (RG=20kâ¦)
VDGR
800
V
Gate-Source Voltage
VGSS
±30
V
Gate-Source Breakdown Voltage (IGS=±1mA)
BVGSO
30(MIN)
V
Insulation Withstand Voltage (DC) TO-220F/ TO-220F1
VISO
2500
V
Avalanche Current (Note 2)
IAR
3
A
Continuous Drain Current
ID
3
A
Pulsed Drain Current
IDM
10
A
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
170
mJ
4.5
V/ns
Power Dissipation
TO-220
TO-220F/ TO-220F1
PD
70
W
25
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. starting TJ=25 °C, ID=IAR, VDD=50V
4. ISDâ¦2.5A, di/dtâ¦200A/μs, VDDâ¦BVDSS, TJâ¦TJ(MAX).
 THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/ TO-220F1
Junction to Case
TO-220
TO-220F/ TO-220F1
SYMBOL
θJA
θJC
RATING
62.5
62.5
1.78
5
UNIT
°C/W
°C/W
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=800V, VGS=0V
VGS=±30V, VDS=0V
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250μA
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
CISS
COSS
CRSS
COSS(EQ)
VDS=25V, VGS=0V, f=1MHz
VGS=0V, VDS=0V~640V
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QDD
VDD=400V, ID=3 A, RG=4.7â¦
VGS=10V
VDD=640V, ID=3A, VGS=10V
MIN TYP MAX UNIT
800
V
1 μA
±10 μA
3 3.75 4.5 V
3.8 4.5 â¦
2.1
S
485
pF
57
pF
11
pF
22
pF
17
ns
27
ns
36
ns
40
ns
19
nC
3.2
nC
10.8
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-283.D
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