3N80Z Datasheet, PDF (2/6 Pages) Unisonic Technologies – 3 Amps, 800Volts N-CHANNEL POWER MOSFET

3N80Z
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage (V_GS=0V)
Drain-Gate Voltage (R_G=20kΩ)
Gate-Source Voltage
Gate-Source Breakdown Voltage (I_GS=±1mA)
Insulation Withstand Voltage (DC)
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
SYMBOL
V_DSS
V_DGR
V_GSS
BV_GSO
V_ISO
I_AR
I_D
I_DM
E_AS
dv/dt
RATINGS
800
800
±20
30 (MIN)
2500
3
3
10
170
4.5
UNIT
V
V
V
V
V
A
A
A
mJ
V/ns
Power Dissipation
P_D
25
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T_J(MAX)
3. starting T_J=25 °C, I_D=I_AR, V_DD=50V
4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX).
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATING
62.5
5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-912.a