3N80 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

3N80
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V_GS=0V)
V_DSS
800
V
Drain-Gate Voltage (R_G=20kΩ)
V_DGR
800
V
Gate-Source Voltage
V_GSS
±30
V
Gate-Source Breakdown Voltage (I_GS=±1mA)
BV_GSO
30(MIN)
V
Gate Source ESD(HBM-C=100pF, R=1.5KΩ)
V_ESD(G-S)
2
V
Insulation Withstand Voltage (DC)
TO-220F
V_ISO
2500
V
Avalanche Current (Note 2)
I_AR
2.5
A
Continuous Drain Current
I_D
2.5
A
Pulsed Drain Current
I_DM
10
A
Single Pulse Avalanche Energy (Note 3)
E_AS
170
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
TO-220
TO-220F
P_D
70
W
25
Junction Temperature
Storage Temperature
T_J
+150
℃
T_STG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T_J(MAX)
3. starting T_J=25 °C, I_D=I_AR, V_DD=50V
4. I_SD≦2.5A, di/dt≦200A/μs, V_DD≦BV_DSS, T_J≦T_J(MAX).
„ THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
TO-220
TO-220F
TO-220
TO-220F
SYMBOL
θ_JA
θ_JC
RATING
62.5
62.5
1.78
5
UNIT
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (T_C=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance (Note 2)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BV_DSS
I_DSS
I_GSS
V_GS=0V, I_D=1mA
V_DS=800V, V_GS=0 V
V_GS=±30V, V_DS=0 V
800
V
1 μA
±10 μA
V_GS(TH)
R_DS(ON)
g_FS
V_DS=V_GS, I_D=50μA
V_GS=10V, I_D=1.25A
V_DS=15V, I_D=1.25A
3 3.75 4.5 V
3.8 4.5 Ω
2.1
S
C_ISS
C_OSS
C_RSS
C_OSS(EQ)
V_DS=25V, V_GS=0V, f=1MHz
V_GS=0V, V_DS=0V~640V
485
pF
57
pF
11
pF
22
pF
t_D(ON)
t_R
t_D(OFF)
t_F
Q_G
Q_GS
Q_DD
V_DD=400V, I_D=1.25 A, R_G=4.7Ω
V_GS=10 V
V_DD=640V, I_D=2.5A, V_GS=10V
17
ns
27
ns
36
ns
40
ns
19
nC
3.2
nC
10.8
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-283.a