3N65K-MK4 Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFE

3N65K-MK4
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
650
V
V_GSS
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
I_AR
3.0
A
I_D
3.0
A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
I_DM
E_AS
E_AR
dv/dt
12
A
130
mJ
7.5
mJ
4.5
V/ns
Power Dissipation
Derate above 25°C
P_D
50
W
0.4
W/°C
Junction Temperature
Operating Temperature
T_J
T_OPR
+150
°C
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J.
3. L=28mH, I_AS=3A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
4. I_SD ≤ 3.0A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
110
2.5
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-045.a