3N50_1109 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 3A, 500V N-CHANNEL POWER MOSFET

3N50
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
500
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous (T_C=25°C)
I_D
Pulsed (Note 2)
I_DM
3 (Note 5)
A
12 (Note 5)
A
Avalanche Current (Note 2)
I_AR
3
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 4)
E_AR
200
mJ
6.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F
Power Dissipation (T_C=25°C)
TO-252
TO-220F
P_D
Derate above 25°C
TO-252
25
W
50
0.2
W/°C
0.4
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 40mH, I_AS = 3A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C
4. I_SD ≤ 3A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
5. Drain current limited by maximum junction temperature
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-530.b