3N50_11 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 3 Amps, 500 Volts N-CHANNEL POWER MOSFET

3N50
Preliminary
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
500
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous (T_C=25°C)
I_D
Pulsed (Note 1)
I_DM
3*
A
12 *
A
Avalanche Current (Note 1)
I_AR
3
A
Avalanche Energy
Single Pulsed (Note 2)
E_AS
Repetitive (Note 3)
E_AR
200
mJ
6.2
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220F
T_C=25°C
TO-252
Power Dissipation
TO-220F
P_D
Derate above 25°C
TO-252
25
W
50
0.2
W/°C
0.4
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Drain current limited by maximum junction temperature
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-530.a