3N50Z Datasheet, PDF (2/6 Pages) Unisonic Technologies – 3A, 500V N-CHANNEL POWER MOSFET

3N50Z
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
500
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous (T_C=25°C)
I_D
Pulsed (Note 2)
I_DM
3 (Note 5)
A
12 (Note 5)
A
Avalanche Current (Note 2)
I_AR
3
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 4)
E_AR
200
mJ
6.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (T_C=25°C)
Derate above 25°C
25
W
P_D
0.2
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 40mH, I_AS = 3A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C
4. I_SD ≤ 3A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
5. Drain current limited by maximum junction temperature
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
4.9
„ ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BV_DSS
I_DSS
I_GSS
I_D=250µA, V_GS=0V
V_DS=500V, V_GS=0V
V_GS=+30V, V_DS=0V
V_GS=-30V, V_DS=0V
V_GS(TH)
R_DS(ON)
V_DS=V_GS, I_D=250µA
V_GS=10V, I_D=1.5A
C_ISS
C_OSS
C_RSS
V_GS=0V, V_DS=25V, f=1.0MHz
MIN TYP MAX UNIT
500
V
1 µA
+100 nA
-100 nA
2.0
4.0 V
2.2 3.2 Ω
280 365 pF
50 65 pF
8.5 11 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-747.a