3003BS_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

13003BS
Preliminary
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
800
V
V_CEO
450
V
Emitter-Base Voltage
V_EBO
9
V
Collector Current
Continuous
I_C
Peak
I_CM
2
4
A
A
Base Current
Continuous
I_B
Peak
I_BM
1
2
A
A
TO-251
10
W
Power Dissipation (T_C=25°C)
TO-126
P_D
TO-92
20
W
1
W
Junction Temperature
Storage Temperature Range
T_J
150
°C
T_STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-251
TO-126
TO-92
TO-251
TO-126
TO-92
SYMBOL
θ_JA
θ_JC
RATING
90
100
150
12.5
7.5
100
 ELECTRICAL CHARACTERISTICS (T_A =25°C, unless otherwise noted)
UNIT
°C/W
°C/W
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note)
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_CEO
I_EBO
h_FE
Low current and high current h_FE2 h_FE1 ratio h_FE1/ h_FE2
Collector-Emitter Saturation Voltage (Note)
V_CE(SAT)
Base-Emitter Saturation Voltage (Note)
V_BE(SAT)
Storage Time
t_S
Rise Time
t_R
Fall Time
t_F
Transition Frequency
f_T
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%.
TEST CONDITIONS
I_C=1mA, I_E=0
I_C=1mA, I_B=0
I_E=1mA, I_C=0
V_CB=800V, I_E=0
V_CE=450V, I_B=0
V_EB=9V, I_C=0
V_CE=5V, I_C=0.2mA
h_FE1: V_CE=5V, I_C=5mA
h_FE2: V_CE=5V, I_C=0.2A
I_C=0.5A, I_B=0.1A
I_C=0.5A, I_B=0.1A
UI9600, I_C=0.25A
V_CE=10V, I_C=0.1A, f=1MHz
MIN TYP MAX UNIT
800
V
450
V
9
V
0.1 mA
0.1 mA
0.1 mA
20
35
0.75
0.8 V
1.5 V
2
5 μs
2 μs
2 μs
5
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R223-018. a