2SD1804_11 Datasheet, PDF (2/5 Pages) Unisonic Technologies – HIGH CURRENT SWITCHING APPLICATIONS

2SD1804
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
60
V
Collector-Emitter Voltage
V_CEO
50
V
Emitter-Base Voltage
V_EBO
6
V
Collector Current
I_C
8
A
Collector Current(PULSE)
I_C(PULSE)
12
A
TO-220
T_A=25°C _{TO-251/TO-252}
Collector Dissipation
TO-220
P_D
T_C=25°C _{TO-251/TO-252}
2
W
1
65
W
20
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
„ CLASSIFICATION OF h_FE1
SYMBOL
TEST CONDITIONS
BV_CBO I_C=10μA, I_E=0
BV_CEO I_C=1mA, R_BE=∞
BV_EBO I_E=10μA, I_C=0
I_CBO V_CB=40V, I_E=0
I_EBO V_EB=4V, I_C=0
h_FE1 V_CE=2V, I_C=0.5A
h_FE2 V_CE=2V, I_C=6A
f_T
V_CE=5V, I_C=1A
C_ob V_CE=10V, f=1MHz
V_CE(SAT) I_C=4A, I_B=0.2A
V_BE(SAT) I_C=4A, I_B=0.2A
t_STG See test circuit
t_F
See test circuit
MIN TYP MAX UNIT
60
V
50
V
6
V
1 μA
1 μA
70
400
35
180
MHz
65
pF
200 400 mV
0.95 1.3 V
500
ns
20
ns
RANK
RANGE
Q
70-140
R
100-200
S
140-280
T
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-006,E